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Description: In FY05 plans were developed to improve the performance and reliability of GaN High Electron Mobility Transistors (GaN HEMTs) for RF power applications by exploiting innovative new methods for the production of GaN HEMT epitaxial material on SiC and by developing novel GaN HEMT device designs and fabrication techniques. Plans to conduct accelerated lifetime test measurements to document improvements were also developed.
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| NAVAL RESEARCH LABORATORY |
$0 |
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Federal |
WASHINGTON,
DC
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| RFMD INFRASTRUCTURE PRODUCT GROUP, INC. |
$0 |
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For-Profit |
CHARLOTTE,
NC
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| THE PENNSYLVANIA STATE UNIVERSITY APPLIED RESEARCH LABORATORY |
$1,928 |
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Public Educational Institution |
UNIVERSITY PARK,
PA
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Citation
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Source:
Appropriations Report Language - Conference
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Reference:
108-622
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Location:
Line 12, Page 288
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Citation Excerpt: Gallium Nitride RF Power Technology
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