Earmark - Novel Silicon Carbide Technology Development

Agency:		Department of Defense--Military
Bureau:		Research, Development, Test, and Evaluation
Account:		Research, development, test, and evaluation, Navy (17-1319)
Certifying Official:		Deputy Comptroller Program/Budget
Contact Information:		http://WWW.DOD.GOV 703-697-5131

Novel Silicon Carbide Technology Development

4 recipients will receive $963,000. This is a first-time earmark.

Year Enacted: 2005

Description: In FY05 an existing SiC epitaxial growth system was modified to accept hydrogen chloride HCl gas. Growth with added HCL has markedly increased the growth rates 3 -> 20 microns per hour, morphology, and purity |Ne-Np| less than 1e14cm-3.

Beneficiary/Recipient	Amount ($K)	Program	Type	Address
NAVAL RESEARCH LABORATORY	$0		Federal	WASHINGTON, DC
UNIVERSITY OF SOUTH FLORIDA BOARD OF TRUSTEES	$963		Private Educational Institution	TAMPA, FL
CARNEGIE MELLON UNIVERSITY	$0		Public Educational Institution	PITTSBURGH, PA
OAKLAND UNIVERSITY	$0		Public Educational Institution	ROCHESTER, MI

Citation

Source: Appropriations Report Language - Conference

Reference: 108-622

Location: Line 12, Page 288

Citation Excerpt: Novel Silicon Carbide Technology Development

Last Modified: 16-Apr-2007