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Agency:    Department of Defense--Military
Bureau:    Research, Development, Test, and Evaluation
Account:    Research, development, test, and evaluation, Navy (17-1319)
Certifying Official:    Deputy Comptroller Program/Budget
Contact Information:    http://WWW.DOD.GOV   703-697-5131
Novel Silicon Carbide Technology Development

4 recipients will receive $963,000. This is a first-time earmark.
Year Enacted: 2005
Description: In FY05 an existing SiC epitaxial growth system was modified to accept hydrogen chloride HCl gas. Growth with added HCL has markedly increased the growth rates 3 -> 20 microns per hour, morphology, and purity |Ne-Np| less than 1e14cm-3.
 
Beneficiary/Recipient Amount ($K) Program Type Address
NAVAL RESEARCH LABORATORY $0 Federal
WASHINGTON, DC
UNIVERSITY OF SOUTH FLORIDA BOARD OF TRUSTEES $963 Private Educational Institution
TAMPA, FL
CARNEGIE MELLON UNIVERSITY $0 Public Educational Institution
PITTSBURGH, PA
OAKLAND UNIVERSITY $0 Public Educational Institution
ROCHESTER, MI
Citation
Source: Appropriations Report Language - Conference
Reference: 108-622
Location: Line 12, Page 288
Citation Excerpt: Novel Silicon Carbide Technology Development

Last Modified: 16-Apr-2007

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