Description: In FY05 an existing SiC epitaxial growth system was modified to accept hydrogen chloride HCl gas. Growth with added HCL has markedly increased the growth rates 3 -> 20 microns per hour, morphology, and purity |Ne-Np| less than 1e14cm-3.
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NAVAL RESEARCH LABORATORY |
$0 |
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Federal |
WASHINGTON,
DC
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UNIVERSITY OF SOUTH FLORIDA BOARD OF TRUSTEES |
$963 |
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Private Educational Institution |
TAMPA,
FL
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CARNEGIE MELLON UNIVERSITY |
$0 |
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Public Educational Institution |
PITTSBURGH,
PA
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OAKLAND UNIVERSITY |
$0 |
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Public Educational Institution |
ROCHESTER,
MI
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Citation
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Source:
Appropriations Report Language - Conference
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Reference:
108-622
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Location:
Line 12, Page 288
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Citation Excerpt: Novel Silicon Carbide Technology Development
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