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Description: In FY05 plans to reduce thermal strain-induced structural defects (which adversely affect device performance), unintentional impurities and allow more reproducible and affordable product were developed. This would have the effect of further improving the performance and capability of DOD's high power electronics by reducing the defect densities in power semiconductor substrates and thin device films. The contractor met with scientists from the Naval Research Laboratory and an approach to testing which will validate progress was defined.
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| NAVAL RESEARCH LABORATORY |
$0 |
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Federal |
WASHINGTON,
DC
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| THE PENNSYLVANIA STATE UNIVERSITY APPLIED RESEARCH LABORATORY |
$1,640 |
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Public Educational Institution |
UNIVERSITY PARK,
PA
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Citation
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Source:
Appropriations Report Language - Conference
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Reference:
108-622
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Location:
Line 12, Page 288
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Citation Excerpt: Widebandgap Materials for Power Electronics
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